Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

10.1109/.2005.1469225

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書目詳細資料
Main Authors:	Yang, T., Li, M.F., Shen, C., Ang, C.H., Zhu, C., Yeo, Y.C., Samudra, G., Rustagi, S.C., Yu, M.B., Kwong, D.L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83730
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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