Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

10.1109/IEDM.2011.6131648

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書目詳細資料
Main Authors:	Tran, X.A., Gao, B., Kang, J.F., Wu, X., Wu, L., Fang, Z., Wang, Z.R., Pey, K.L., Yeo, Y.C., Du, A.Y., Liu, M., Nguyen, B.Y., Li, M.F., Yu, H.Y.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/84169
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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