Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication

Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication

As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance.

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書目詳細資料
主要作者:	Kim, Jae Hyung.
其他作者:	School of Materials Science & Engineering
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
在線閱讀:	http://hdl.handle.net/10356/5063
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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