Device physics and design of a L-shaped germanium source tunneling transistor

Device physics and design of a L-shaped germanium source tunneling transistor

10.1143/JJAP.51.02BC04

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Bibliographic Details
Main Authors:	Low, K.L., Zhan, C., Han, G., Yang, Y., Goh, K.-H., Guo, P., Toh, E.-H., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82149
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Institution:	National University of Singapore

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