Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes

Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes

Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectivenes...

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書目詳細資料
Main Authors:	Tan, Cher Ming, Fu, Chunmiao
其他作者:	School of Electrical and Electronic Engineering
格式:	Conference or Workshop Item
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/101087 http://hdl.handle.net/10220/16310
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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