Study on diffusion barriers for multilevel interconnect in advanced semiconductor devices
Since the advent of microelectronics and wafer fabrication, the need for diffusion barriers/adhesion promoters in interconnect systems to enhance mechanical stability and prevent interdiffusion has emerged. This studey investigated the integrity of TiN diffusion barriers in A1 interconnect system.
Saved in:
Main Author: | Lim, Boon Kiat. |
---|---|
Other Authors: | Park, Hun Sub |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/5077 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
by: Kim, Jae Hyung.
Published: (2008) -
Tantalum-based diffusion barriers for copper metallization
by: Khin Maung Latt.
Published: (2008) -
Dielectric failure mechanisms in advanced Cu/low-k interconnect architecture
by: Tan, Tam Lyn
Published: (2008) -
Back-end-of-line process reliability of advanced semiconductor technology
by: Park, Hun Sub.
Published: (2008) -
Anisotropic conductive adhesive for micro joining in semiconductor interconnects application (solder alternative for fine pitch & environment friendly IC packaging)
by: Goh, Chin Foo
Published: (2008)