Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applications
10.1063/1.1758297
Saved in:
Main Authors: | Gupta, R., Yoo, W.J., Wang, Y., Tan, Z., Samudra, G., Lee, S., Chan, D.S.H., Loh, K.P., Bera, L.K., Balasubramanian, N., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82378 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric
by: Chen, J., et al.
Published: (2014) -
Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition
by: Yeo, C.C., et al.
Published: (2014) -
Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application
by: Tan, Z., et al.
Published: (2014) -
MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
by: Park, C.S., et al.
Published: (2014) -
SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack
by: Gao, F., et al.
Published: (2014)