High work function IrxSi gates on HfAlON p-MOSFETs

High work function IrxSi gates on HfAlON p-MOSFETs

10.1109/LED.2005.862687

Saved in:

Bibliographic Details
Main Authors:	Wu, C.H., Yu, D.S., Chin, A., Wang, S.J., Li, M.-F., Zhu, C., Hung, B.F., McAlister, S.P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82457
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
by: Yu, D.S., et al.
Published: (2014)

The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
by: Yu, X., et al.
Published: (2014)

MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
by: Park, C.S., et al.
Published: (2014)

High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
by: Wu, C.H., et al.
Published: (2014)

Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs
by: Yu, D.S., et al.
Published: (2014)

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack
by: Gao, F., et al.
Published: (2014)

The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
by: Yu, D.S., et al.
Published: (2014)

Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
by: Yu, D.S., et al.
Published: (2014)

New insights in hf based high-k gate dielectrics in mosfets
by: Li, M.-F., et al.
Published: (2014)

Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application
by: Yu, X., et al.
Published: (2014)

Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection
by: Liao, C.C., et al.
Published: (2014)

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs
by: Huang, C.H., et al.
Published: (2014)

Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and la-doped HfSiO gate dielectrics
by: Du, Guoan.
Published: (2013)

Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates
by: Yu, D.S., et al.
Published: (2014)

Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory application
by: Wang, Y.Q., et al.
Published: (2014)

Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention
by: Lai, C.H., et al.
Published: (2014)

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack
by: Peng, J.W., et al.
Published: (2014)

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric
by: Yeo, C.C., et al.
Published: (2011)

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si 1-xGex/Si nMOSFETs with HfO2 gate dielectric
by: Yeo, C.C., et al.
Published: (2014)

Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET
by: Lim, A.E.-J., et al.
Published: (2014)

Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
by: Wang, X.P., et al.
Published: (2014)

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs
by: Yu, D.S., et al.
Published: (2014)

Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectric
by: Yu, X., et al.
Published: (2014)

Quantum tunneling and scalability of HfO2 and HfAlO gate stacks
by: Hou, Y.T., et al.
Published: (2014)

Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
by: Wu, N., et al.
Published: (2014)

Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
by: Whang, S.J., et al.
Published: (2014)

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
by: Wu, N., et al.
Published: (2014)

Failure mechanisms in HfO2 high-k gate stack MOSFETs
by: Ranjan Rakesh
Published: (2008)

Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
by: Shen, C., et al.
Published: (2014)

BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectric
by: Wu, N., et al.
Published: (2014)

Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuits
by: Shen, C., et al.
Published: (2014)

Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectric
by: Xie, R., et al.
Published: (2014)

A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETs
by: Ang, D.S., et al.
Published: (2014)

Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs
by: Shen, C., et al.
Published: (2014)

A novel program-erasable high-k AlN-Si MIS capacitor
by: Lai, C.H., et al.
Published: (2014)

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
by: Li, R., et al.
Published: (2014)

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
by: Yang, T., et al.
Published: (2014)

New insights of BTI degradation in MOSFETs with SiON gate dielectrics
by: Li, M.-F., et al.
Published: (2014)

Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode
by: Gao, F., et al.
Published: (2014)

A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
by: Yu, X., et al.
Published: (2014)