Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

10.1109/IEDM.2008.4796705

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書目詳細資料
Main Authors:	Lin, J., Lee, S., Oh, H.-J., Yang, W., Lo, G.Q., Kwong, D.L., Chi, D.Z.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/84101
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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