High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

• Main Authors: Tran, X.A., Gao, B., Kang, J.F., Wu, L., Wang, Z.R., Fang, Z., Pey, K.L., Yeo, Y.C., Du, A.Y., Nguyen, B.Y., Li, M.F., Yu, H.Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83788
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology