New insights in hf based high-k gate dielectrics in mosfets
10.1149/1.2209318
Saved in:
Main Authors: | Li, M.-F., Zhu, C., Shen, C., Yu, X.F., Wang, X.P., Feng, Y.P., Du, A.Y., Yeo, Y.C., Samudra, G., Chin, A., Kwong, D.L. |
---|---|
Other Authors: | PHYSICS |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84007 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs
by: Shen, C., et al.
Published: (2014) -
High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric
by: Yu, X., et al.
Published: (2014) -
Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
by: Wang, X.P., et al.
Published: (2014) -
Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectric
by: Yu, X., et al.
Published: (2014) -
Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
by: Shen, C., et al.
Published: (2014)