GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

10.1109/IEDM.2006.346743

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書目詳細資料
Main Authors:	Gao, F., Lee, S.J., Li, R., Whang, S.J., Balakumar, S., Chi, D.Z., Kean, C.C., Vicknesh, S., Tung, C.H., Kwong, D.-L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83754
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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